F1027 사양 : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1027 유사

F1020
- Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1021
- 100 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1022
- 80 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1027
- 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1027 Datasheet 및 사양

제조사 : Polyfet RF

포장 :

팡 : 4

온도 : 분 -65 °C | 맥스 150 °C

파일크기 : 43 KB

응용 프로그램 : 200 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor