경로 :OKDatasheet > 반도체업체순위 > Philips Datasheet > PHB11N06LT
PHB11N06LT 사양 : 55 V, N-channel trenchMOS transistor logic level FET
PHB11N06LT 유사
- PHB100N03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB10N40
- PowerMOS transistor.
- PHB10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHB112N06T
- 55 V, N-channel enhancement mode field-effect transistor
- PHB11N03LT
- N-channel TrenchMOS(TM) transistor Logic level FET
- PHB11N03LT
- 30 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- 55 V, N-channel trenchMOS transistor logic level FET
- PHB11N06LT
- TrenchMOS transistor. Logic level FET.
PHB11N06LT Datasheet 및 사양
제조사 : Philips
포장 : SOT
팡 : 3
온도 : 분 -55 °C | 맥스 175 °C
파일크기 : 125 KB
응용 프로그램 : 55 V, N-channel trenchMOS transistor logic level FET
다운로드를 PHB11N06LT