BUK555-200B 사양 : PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.

BUK555-200B 유사

BUK542-100A
- 100 V, power MOS transistor
BUK542-100A
- 100 V, power MOS transistor
BUK542-100B
- 100 V, power MOS transistor
BUK542-60A
- 60 V, power MOS transistor
BUK542-60B
- 60 V, power MOS transistor
BUK542-60B
- 60 V, power MOS transistor
BUK543-100A
- PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 8.3 A.
BUK543-100A
- 100 V, power MOS transistor

BUK555-200B Datasheet 및 사양

제조사 : Philips

포장 : TO220AB

팡 : 3

온도 : 분 0 °C | 맥스 175 °C

파일크기 : 76 KB

응용 프로그램 : PowerMOS transistor. Logic level FET. Drain-source voltage 200 V. Drain current(DC) 13 A.