1N5950B 사양 : Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 110V. Test current Izt = 3.4 mA.

1N5950B 유사

1N5926B
- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 11V. Test current Izt = 34.1 mA.
1N5927B
- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 12V. Test current Izt = 31.2 mA.
1N5928B
- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 13V. Test current Izt = 28.8 mA.
1N5929B
- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 15V. Test current Izt = 25 mA.
1N5930B
- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 16V. Test current Izt = 23.4 mA.
1N5931B
- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 18V. Test current Izt = 20.8 mA.
1N5932B
- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 20V. Test current Izt = 18.7 mA.
1N5932B
- Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 20V. Test current Izt = 18.7 mA.

1N5950B Datasheet 및 사양

제조사 : PanJit

포장 :

팡 : 2

온도 : 분 -55 °C | 맥스 150 °C

파일크기 : 89 KB

응용 프로그램 : Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 110V. Test current Izt = 3.4 mA.