1N5371B 사양 : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 60V, Izt =20mA

1N5371B 유사

1N5348B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 11V, Izt = 125mA
1N5349B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 12V, Izt = 100mA
1N5350B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 13V, Izt = 100mA
1N5351B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
1N5351B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 14V, Izt = 100mA
1N5352B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 15V, Izt = 75mA
1N5354B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 17V, Izt = 70mA
1N5355B
- Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 18V, Izt = 65mA

1N5371B Datasheet 및 사양

제조사 : PanJit

포장 : DO-201AE

팡 : 2

온도 : 분 -55 °C | 맥스 150 °C

파일크기 : 336 KB

응용 프로그램 : Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 60V, Izt =20mA