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MGY25N120D 사양 : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120D 유사
- MGY20N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
- MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120
- Insulated Gate Bipolar Transistor N-Channel
- MGY25N120D
- Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
MGY25N120D Datasheet 및 사양
제조사 : ON Semiconductor
포장 : TO-3PBL
팡 : 3
온도 : 분 0 °C | 맥스 0 °C
파일크기 : 188 KB
응용 프로그램 : Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel
다운로드를 MGY25N120D