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NTE6411 유사

  • NTE60
    • Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
  • NTE6002
    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
  • NTE6003
    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
  • NTE6004
    • Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
  • NTE6005
    • Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
  • NTE6007
    • Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
  • NTE6008
    • Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
  • NTE6009
    • Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.

NTE6411 Datasheet 및 사양

제조사 : NTE Electronic 

포장 : DO35 

팡 : 2 

온도 : 분 -40 °C | 맥스 125 °C

파일크기 : 19 KB

응용 프로그램 : Bilateral trigger diode (DIAC). Breakover voltage (forward and reverse) 40V (typ). 

다운로드를 NTE6411