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NTE623 사양 : Silicon rectifier, fast recovery,dual, center tap. Peak repetitive reverse voltage 200V. Average rectifier forward current 3A (per diode), 6A (total device).
NTE623 유사
- NTE60
- Silicon complrmentary NPN transistor to NTE61. High power audio, disk head positioner for linear applications.
- NTE6002
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6003
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
- NTE6004
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6005
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
- NTE6007
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 200V. Average rectified forward current 40A.
- NTE6008
- Fast recovery rectifier, 200ns. Cathode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
- NTE6009
- Fast recovery rectifier, 200ns. Anode to case. Peak repetitive reverse voltage 400V. Average rectified forward current 40A.
NTE623 Datasheet 및 사양
제조사 : NTE Electronic
포장 : TO220
팡 : 3
온도 : 분 -65 °C | 맥스 175 °C
파일크기 : 19 KB
응용 프로그램 : Silicon rectifier, fast recovery,dual, center tap. Peak repetitive reverse voltage 200V. Average rectifier forward current 3A (per diode), 6A (total device).
다운로드를 NTE623