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NTE5580 사양 : Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 200V. Max RMS on-state current It(rms) = 235A.
NTE5580 유사
- NTE5198A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 24V. Zener test current Izt = 105mA."
- NTE5183A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 8.2V. Zener test current Izt = 305mA."
- NTE5945
- Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 15A.
- NTE5227A
- "Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 160V. Zener test current Izt = 16mA."
- NTE5914
- Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A.
- NTE5045A
- "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 68V, Zener test current Izt = 1.8mA."
- NTE5322W
- "Silicon bridge rectifier, single - phase, 25A. Maximum recurrent peak reverse voltage, Prv = 200V."
- NTE5001A
- "Zener diode, 1/2 watt, + - 5 % tolerance. Nominal zener voltage Vz = 2.5V, Zener test current Izt = 20mA."
NTE5580 Datasheet 및 사양
제조사 : NTE Electronic
포장 :
팡 : 4
온도 : 분 -40 °C | 맥스 125 °C
파일크기 : 25 KB
응용 프로그램 : Silicon controlled rectiifier for phase control applications. Repetitive peak off-state and reverse voltage Vdrm,Vrrm = 200V. Max RMS on-state current It(rms) = 235A.
다운로드를 NTE5580