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NTE5414 사양 : Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 200V.
경로 :OKDatasheet > 반도체업체순위 > NTE Electronic Datasheet > NTE5414
NTE5414 사양 : Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 200V.
제조사 : NTE Electronic
포장 : TO126
팡 : 3
온도 : 분 -40 °C | 맥스 110 °C
파일크기 : 23 KB
응용 프로그램 : Silicon controlled rectifier (SCR). 4 Amp, sensitive gate. Repetitive peak voltage and reverse blocking voltage (Vdrm, Vrrm) 200V.