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MTW10N100E 사양 : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW10N100E 유사
- MTW10N100E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
- MTW14N50E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
- MTW16N40E
- TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
MTW10N100E Datasheet 및 사양
제조사 : Motorola
포장 : TO-247AE
팡 : 4
온도 : 분 -55 °C | 맥스 150 °C
파일크기 : 211 KB
응용 프로그램 : TMOS E-FET power field effect transistor TO-247 with isolated mounting hole
다운로드를 MTW10N100E