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MTB55N06Z 사양 : TMOS E-FET high energy power FET D2PAK for surface mount
MTB55N06Z 유사
- MTB50N06EL
- TMOS E-FET power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB50N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06V
- TMOS V power field effect transistor D2PAK for surface mount
- MTB52N06VL
- TMOS V power field effect transistor D2PAK for surface mount
- MTB55N06Z
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB55N06Z Datasheet 및 사양
제조사 : Motorola
포장 : DPAK
팡 : 4
온도 : 분 -55 °C | 맥스 150 °C
파일크기 : 160 KB
응용 프로그램 : TMOS E-FET high energy power FET D2PAK for surface mount
다운로드를 MTB55N06Z