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BUL52B 사양 : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B 유사
- BUL52A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL52B
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
- BUL54A
- Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUL52B Datasheet 및 사양
제조사 : Magnatec
포장 : TO220
팡 : 3
온도 : 분 0 °C | 맥스 150 °C
파일크기 : 20 KB
응용 프로그램 : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
다운로드를 BUL52B