Magnatec 데이터 시트 검색, 최신 Magnatec 데이터 시트

구체적인 Magnatec 데이터 시트를 찾으려면, 찾기 okdatasheet 부품 번호 또는 구성 요소를 설명합니다. 당신과 함께 수여됩니다 Magnatec 부품과 일치하는 모든 데이터 시트의 목록을합니다. 클릭하면 전자 구성 요소를 나열 사양을 포함하여 자세한 내용을합니다.
Magnatec 공식 웹사이트

에 대한 최신 Magnatec 데이터 시트 여부

부품번호	응용 프로그램
BUZ905DP	P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V.
BCU83	NPN epitaxial planar silicon tpansistor. Ideal for high current driver applications reguiring low loss devices.
BUZ901DP	N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BUZ903	N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
SMX35	Silicon NPN epitaxial planar power transistor.
BCU83D	NPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
BUZ900P	N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 160V.
BUZ900P	N-channel power MOSFET for audio applications, 160V
BUZ905P	P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -160V.
BUL74B	Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BCU81	NPN epitaxial planar silicon tpansistor. Ideal for high current driver applications requiring low loss devices.
BUZ906P	P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ900D	N-channel power MOSFET for audio applications, 160V
BUZ906X4S	P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ906DP	P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -200V.
BUZ901P	N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.
BCU86	NPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
BUZ901D	N-channel power MOSFET for audio applications, 200V
BUZ907D	P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V.
BUZ902P	N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V.
BUZ908D	P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUL54A	Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
BUZ908P	P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -250V.
BUZ903D	N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
BUZ907P	P-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage -220V.
T64	PNP silicon darlington power transistor. Complementary epitaxial base transistors in monolithic darlington circuit for audio output stages and general amplifier and switching applications.
BCU86D	NPN epitaxial planar silicon tpansistor. Ideal for high current switching application.
SMX37	Silicon NPN epitaxial planar power transistor.

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