경로 :OKDatasheet > 반도체업체순위 > MDE Semiconductor Datasheet > 3KP11
3KP11 사양 : 11.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
3KP11 유사
- 3KP10
- 10.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 3KP10A
- 10.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 3KP11
- 11.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 3KP12
- 12.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 3KP12A
- 12.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 3KP13
- 13.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 3KP13A
- 13.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
- 3KP14
- 14.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
3KP11 Datasheet 및 사양
제조사 : MDE Semiconductor
포장 : P-600
팡 : 2
온도 : 분 -55 °C | 맥스 175 °C
파일크기 : 648 KB
응용 프로그램 : 11.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
다운로드를 3KP11