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TMV1412 사양 : Diode capacitance8-12pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
TMV1412 유사
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- Diode capacitance45-69pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
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- TMV1403
- Diode capacitance140-210pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
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- Diode capacitance96-144pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
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- Diode capacitance200-300pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
- TMV1406
- Diode capacitance80-120pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
- TMV1407
- Diode capacitance54-82pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
- TMV1408
- Diode capacitance37-57pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
TMV1412 Datasheet 및 사양
제조사 : Knox Semiconductor
포장 :
팡 : 0
온도 : 분 -55 °C | 맥스 125 °C
파일크기 : 37 KB
응용 프로그램 : Diode capacitance8-12pF; VBR12V min; 280mW; silicon hihg ratio plastic thru hole varactor
다운로드를 TMV1412