3EZ6.2D10 사양 : 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-10% tolerance.

3EZ6.2D10 유사

3EZ6.2D
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-20% tolerance.
3EZ6.2D1
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-1% tolerance.
3EZ6.2D10
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-10% tolerance.
3EZ6.2D2
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-2% tolerance.
3EZ6.2D3
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-3% tolerance.
3EZ6.2D4
- "3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-4% tolerance."
3EZ6.2D5
- 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-5% tolerance.
3EZ6.8D
- 3 W, silicon zener diode. Nominal voltage 6.8 V, current 110 mA, +-20% tolerance.

3EZ6.2D10 Datasheet 및 사양

제조사 : JGD

포장 :

팡 : 2

온도 : 분 -65 °C | 맥스 175 °C

파일크기 : 160 KB

응용 프로그램 : 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-10% tolerance.