3EZ47D10 사양 : 3 W, silicon zener diode. Nominal voltage 47 V, current 16 mA, +-10% tolerance.

3EZ47D10 유사

3EZ4.3D1
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-1% tolerance.
3EZ4.3D10
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-10% tolerance.
3EZ4.3D2
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-2% tolerance.
3EZ4.3D3
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-3% tolerance.
3EZ4.3D4
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-4% tolerance.
3EZ4.3D5
- 3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-5% tolerance.
3EZ4.7D
- 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-20% tolerance.
3EZ4.7D1
- 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-1% tolerance.

3EZ47D10 Datasheet 및 사양

제조사 : JGD

포장 :

팡 : 2

온도 : 분 -65 °C | 맥스 175 °C

파일크기 : 160 KB

응용 프로그램 : 3 W, silicon zener diode. Nominal voltage 47 V, current 16 mA, +-10% tolerance.