3EZ200D10 사양 : 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance.

3EZ200D10 유사

3EZ200D
- 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-20% tolerance.
3EZ200D1
- 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-1% tolerance.
3EZ200D10
- 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance.
3EZ200D3
- 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-3% tolerance.
3EZ200D4
- 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-4% tolerance.
3EZ200D5
- 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-5% tolerance.
3EZ20D
- 3 W, silicon zener diode. Nominal voltage 20 V, current 37 mA, +-20% tolerance.
3EZ20D10
- 3 W, silicon zener diode. Nominal voltage 20 V, current 37 mA, +-10% tolerance.

3EZ200D10 Datasheet 및 사양

제조사 : JGD

포장 :

팡 : 2

온도 : 분 -65 °C | 맥스 175 °C

파일크기 : 160 KB

응용 프로그램 : 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance.