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IXBH16N170A 사양 : 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
IXBH16N170A 유사
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- IXBH16N170
- 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
- IXBH16N170A
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IXBH16N170A Datasheet 및 사양
제조사 : IXYS
포장 : TO-247AD
팡 : 3
온도 : 분 -40 °C | 맥스 150 °C
파일크기 : 56 KB
응용 프로그램 : 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor
다운로드를 IXBH16N170A