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IRFS59N10D 사양 : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D 유사
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- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.17 Ohm, ID = 16A
- IRFS23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFS23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFS23N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
- IRFS33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
- IRFS38N20D
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- IRFS4710
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.014 Ohm, ID = 75A
- IRFS59N10D
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
IRFS59N10D Datasheet 및 사양
제조사 : IR
포장 : DDPak
팡 : 3
온도 : 분 -55 °C | 맥스 175 °C
파일크기 : 151 KB
응용 프로그램 : HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.025 Ohm, ID = 58A
다운로드를 IRFS59N10D