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IRFP23N50L 사양 : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.190 Ohm, ID = 23A, Trr = 170ns.
IRFP23N50L 유사
- IRFP044
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.028 Ohm, ID = 57A
- IRFP048
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.018 Ohm, ID = 70A
- IRFP048N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.016 Ohm, ID = 64A
- IRFP054
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.014 Ohm, ID = 70A
- IRFP054V
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 9.0mOhm, ID = 93A
- IRFP054V
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 9.0mOhm, ID = 93A
- IRFP064
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 0.009 Ohm, ID = 70A
- IRFP064N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 0.008 Ohm, ID = 110A
IRFP23N50L Datasheet 및 사양
제조사 : IR
포장 : TO-247AC
팡 : 3
온도 : 분 -55 °C | 맥스 150 °C
파일크기 : 114 KB
응용 프로그램 : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.190 Ohm, ID = 23A, Trr = 170ns.
다운로드를 IRFP23N50L