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IRFB9N60A 사양 : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
IRFB9N60A 유사
- IRFB11N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
- IRFB13N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
- IRFB18N50K
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
- IRFB23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFB23N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
- IRFB260N
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
- IRFB31N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
- IRFB33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
IRFB9N60A Datasheet 및 사양
제조사 : IR
포장 :
팡 : 3
온도 : 분 -55 °C | 맥스 150 °C
파일크기 : 148 KB
응용 프로그램 : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
다운로드를 IRFB9N60A