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IRF9Z24NS 사양 : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A
IRF9Z24NS 유사
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- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
- IRF9240
- HEXFET transistor thru-hole. BVDS = -200V, RDS(on) = 0.5 Ohm , ID = -11A
IRF9Z24NS Datasheet 및 사양
제조사 : IR
포장 : DDPak
팡 : 3
온도 : 분 -55 °C | 맥스 175 °C
파일크기 : 184 KB
응용 프로그램 : HEXFET power MOSFET. VDSS = -55V, RDS(on) = 0.175 Ohm, ID = -12A
다운로드를 IRF9Z24NS