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IRF830A 사양 : HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
IRF830A 유사
- IRF820
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820AL
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820AS
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF820S
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 3.0Ohm , ID = 2.5A
- IRF830A
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
- IRF830AS
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
- IRF830S
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.5 Ohm , ID = 4.5A
- IRF840
- HEXFET power MOSFET. VDS = 500V, RDS(on) = 0.85 Ohm , ID = 8.0A
IRF830A Datasheet 및 사양
제조사 : IR
포장 :
팡 : 3
온도 : 분 -55 °C | 맥스 150 °C
파일크기 : 118 KB
응용 프로그램 : HEXFET power MOSFET. VDS = 500V, RDS(on) = 1.40 Ohm , ID = 5.0A
다운로드를 IRF830A