IRF7707 사양 : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -4.5V. RDS(on) = 33mOhm, ID = -6.0A @ VGS = -2.5V.

IRF7707 유사

IRF7103
- N-channel power MOSFET for fast switching applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103Q
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF7103QTR
- N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
IRF720
- N-channel HEXFET, 400V, 3.3A
IRF7204
- P-channel MOSFET for fast switching applications, 20V, 5.3A
IRF721
- N-channel HEXFET, 350V, 3.3A
IRF722
- N-channel HEXFET, 400V, 2.8A

IRF7707 Datasheet 및 사양

제조사 : IR

포장 : TSSOP

팡 : 8

온도 : 분 -55 °C | 맥스 150 °C

파일크기 : 169 KB

응용 프로그램 : HEXFET power MOSFET. VDSS = -20V, RDS(on) = 22mOhm, ID = -7.0A @ VGS = -4.5V. RDS(on) = 33mOhm, ID = -6.0A @ VGS = -2.5V.