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IRF5Y3205CM 사양 : HEXFET power MOSFET thru-hole. BVDSS = 55V, RDS(on) = 0.022 Ohm, ID = 18A
IRF5Y3205CM 유사
- IRF510
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF510S
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.54 Ohm, ID = 5.6A
- IRF520N
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520NS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A
- IRF520VL
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF520VS
- HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.165 Ohm, ID = 9.6A
- IRF5210
- HEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.06 Ohm, ID = -40A
IRF5Y3205CM Datasheet 및 사양
제조사 : IR
포장 : TO-257AA
팡 : 3
온도 : 분 -55 °C | 맥스 150 °C
파일크기 : 113 KB
응용 프로그램 : HEXFET power MOSFET thru-hole. BVDSS = 55V, RDS(on) = 0.022 Ohm, ID = 18A
다운로드를 IRF5Y3205CM