IRF3711L 유사

  • IRF3205
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF3205L
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF3205S
    • HEXFET power MOSFET. VDSS = 55V, RDS(on) = 8.0 mOhm, ID = 110A
  • IRF330
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
  • IRF330
    • Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =400V, RDS(on) = 1.0 Ohm, ID = 5.5A
  • IRF3315
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.07 Ohm, ID = 27A
  • IRF3315L
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A
  • IRF3315L
    • HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.082 Ohm, ID = 21A

IRF3711L Datasheet 및 사양

제조사 : IR 

포장 : TO-262 

팡 : 3 

온도 : 분 -55 °C | 맥스 150 °C

파일크기 : 269 KB

응용 프로그램 : HEXFET power MOSFET. VDSS = 20V, RDS(on) = 6.0 mOhm, ID = 110A 

다운로드를 IRF3711L