경로 :OKDatasheet > 반도체업체순위 > IR Datasheet > IRF130
IRF130 사양 : Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A
IRF130 유사
- IRF1010E
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
- IRF1010EL
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
- IRF1010ES
- HEXFET power MOSFET. VDSS = 60V, RDS(on) = 12 mOhm, ID = 84A.
- IRF1010N
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
- IRF1010NL
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
- IRF1010NS
- HEXFET power MOSFET. VDSS = 55V, RDS(on) = 11 mOhm, ID = 85A.
- IRF1104
- HEXFET power MOSFET. VDSS = 40V, RDS(on) = 0.009 Ohm, ID = 100A.
- IRF130
- Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A
IRF130 Datasheet 및 사양
제조사 : IR
포장 : TO-3
팡 : 3
온도 : 분 -55 °C | 맥스 150 °C
파일크기 : 161 KB
응용 프로그램 : Repetitive avalanche and dv/dt rated HEXFET transistor thru-hole(TO-204AA/AE). BVDSS =100V, RDS(on) = 0.18 Ohm, ID = 14A
다운로드를 IRF130