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HMBT5551 사양 : Emitter to base voltage6V; 600mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltage
HMBT5551 유사
- HMBT1015
- 5V 150mA PNP epitaxial planar transistor for use in driver stage of AF amplifier and general purpose amplification
- HMBT1015
- 5V 150mA PNP epitaxial planar transistor for use in driver stage of AF amplifier and general purpose amplification
- HMBT1815
- 5V 150mA NPN epitaxial planar transistor for use in driver stage of AF amplifier and general purpose amplification
- HMBT2222A
- 6V 600mA NPN epitaxial planar transistor for general purpose amplifier and high-speed switching, medium-power switching applications
- HMBT2369
- 40V 500mA NPN epitaxial planar transistor for general purpose switching and amplifier applications
- HMBT2484
- 6V 50mA NPN epitaxial planar transistor
- HMBT2907A
- 5V 600mA PNP epitaxial planar transistor for general purpose amplifier and high-speed switching, medium power swithcing applications
- HMBT3904
- 6V 200mA NPN epitaxial planar transistor for general purpose switching amplifier applications
HMBT5551 Datasheet 및 사양
제조사 : Hi Sincerity
포장 : SOT-23
팡 : 3
온도 : 분 0 °C | 맥스 0 °C
파일크기 : 34 KB
응용 프로그램 : Emitter to base voltage6V; 600mA NPN epitaxial planar transistor for general purpose applications requiring high breakdown voltage
다운로드를 HMBT5551