H2N5401 사양 : 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage

H2N5401 유사

H2N5087
- 50mA PNP epitaxial planar transistor for low noise, high gain, general purpose amplifier applications
H2N5088
- 50mA NPN epitaxial planar transistor for low noise, high gain, general purpose amplifier applications
H2N5366
- 500mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltages
H2N5401
- 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage
H2N5551
- 600mA NPN epitaxial planar transistor

H2N5401 Datasheet 및 사양

포장 :

팡 : 3

온도 : 분 0 °C | 맥스 0 °C

파일크기 : 41 KB

응용 프로그램 : 600mA PNP epitaxial planar transistor for general purpose applications requiring high breakdown voltage