경로 :OKDatasheet > 반도체업체순위 > HYNIX Datasheet > HY51V18163HGJ-7
HY51V18163HGJ-7 사양 : Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51V18163HGJ-7 유사
- HY51V17403HGJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGLJ-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLJ-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGLT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns, low power
- HY51V17403HGLT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns, low power
- HY51V17403HGT-6
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 60ns
- HY51V17403HGT-7
- 4,194,304 words x 4 bit EDO RAM, 3.3V, 70ns
- HY51V18163HGJ-7
- Dynamic RAM organized 1,048,576 words x 16bit, 70ns
HY51V18163HGJ-7 Datasheet 및 사양
제조사 : HYNIX
포장 : SOJ
팡 : 42
온도 : 분 0 °C | 맥스 70 °C
파일크기 : 117 KB
응용 프로그램 : Dynamic RAM organized 1,048,576 words x 16bit, 70ns
다운로드를 HY51V18163HGJ-7