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RFD4N06L 사양 : Power dissipation 30 W Transistor polarity N Channel Current Id cont. 4 A Current Idm pulse 10 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 60 V Resistance Rds on 0.6 R Temperature current 25 ?C

RFD4N06L 유사

  • RFD4N06L
    • Power dissipation 30 W Transistor polarity N Channel Current Id cont. 4 A Current Idm pulse 10 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 60 V Resistance Rds on 0.6 R Temperature current 25 ?C

RFD4N06L Datasheet 및 사양

제조사 : Fairchild 

포장 : TO-251 

팡 : 0 

온도 : 분 0 °C | 맥스 0 °C

파일크기 : 41 KB

응용 프로그램 : Power dissipation 30 W Transistor polarity N Channel Current Id cont. 4 A Current Idm pulse 10 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 60 V Resistance Rds on 0.6 R Temperature current 25 ?C 

다운로드를 RFD4N06L