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RFD16N05L 사양 : Power dissipation 60 W Transistor polarity N Channel Current Id cont. 16 A Current Idm pulse 45 A Voltage Vgs th max. 2 V (I-Pak) Voltage Vds max 50 V Resistance Rds on 0.047 R Temperature current 25 ?C

RFD16N05L 유사

  • RFD10P03LSM
    • 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
  • RFD12N06RLE
    • 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
  • RFD14N05
    • 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
  • RFD14N05LSM
    • 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
  • RFD14N05SM
    • 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
  • RFD16N03LSM
    • Power dissipation 90 W Transistor polarity N Channel Current Id cont. 16 A Current Idm pulse 80 A Voltage Vgs th max. 2 V Voltage Vds max 30 V Resistance Rds on 0.022 R Temperature current 25 ?C
  • RFD16N05L
    • Power dissipation 60 W Transistor polarity N Channel Current Id cont. 16 A Current Idm pulse 45 A Voltage Vgs th max. 2 V (I-Pak) Voltage Vds max 50 V Resistance Rds on 0.047 R Temperature current 25 ?C
  • RFD16N05LSM
    • 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

RFD16N05L Datasheet 및 사양

제조사 : Fairchild 

포장 : TO-251 

팡 : 0 

온도 : 분 0 °C | 맥스 0 °C

파일크기 : 51 KB

응용 프로그램 : Power dissipation 60 W Transistor polarity N Channel Current Id cont. 16 A Current Idm pulse 45 A Voltage Vgs th max. 2 V (I-Pak) Voltage Vds max 50 V Resistance Rds on 0.047 R Temperature current 25 ?C 

다운로드를 RFD16N05L