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NDH853N 사양 : Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
NDH853N 유사
- NDH8301N
- Dual N-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs]
- NDH8303N
- Dual N-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs]
- NDH8304P
- Dual P-Channel Enhancement Mode Field Effect Transistor
- NDH831N
- N-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs]
- NDH8320C
- Dual N & P-Channel Enhancement Mode Field EffectTransistor [Not recommended for new designs]
- NDH8321C
- Dual N & P-Channel Enhancement Mode Field Effect Transistor [Not recommended for new designs]
- NDH832P
- P-Channel Enhancement Mode Field Effect Transistor
- NDH832P
- P-Channel Enhancement Mode Field Effect Transistor
NDH853N Datasheet 및 사양
제조사 : Fairchild
포장 : SuperSOT-8
팡 : 0
온도 : 분 0 °C | 맥스 0 °C
파일크기 : 90 KB
응용 프로그램 : Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
다운로드를 NDH853N