TZX30B 사양 : 29.2-30.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current

TZX30B 유사

TZX30
- 28.2-31.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX30A
- 28.2-29.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX30B
- 29.2-30.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX30C
- 30.2-31.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX33
- 31.2-34.5V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX33A
- 31.2-32.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX33B
- 32.2-33.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current
TZX33C
- 33.2-34.5V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current

TZX30B Datasheet 및 사양

제조사 : Diodes

포장 : DO-35

팡 : 2

온도 : 분 -65 °C | 맥스 175 °C

파일크기 : 73 KB

응용 프로그램 : 29.2-30.6V; 500mW; 5.0mA epitaxial planar zener diode. General purpose, medium current