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W4TXE0X-0D00 사양 : Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TXE0X-0D00 유사

  • W4TXE0X-0D00
    • Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

W4TXE0X-0D00 Datasheet 및 사양

제조사 : Cree 

포장 :  

팡 : 0 

온도 : 분 0 °C | 맥스 0 °C

파일크기 : 306 KB

응용 프로그램 : Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition 

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