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CRF-22010-101 사양 : 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
CRF-22010-101 유사
- CRF-22010-001
- 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
- CRF-22010-101
- 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
- CRF-22010-TB
- 50VDC ;66W; evaluation board for CRF-22010 version A (narrowband)
- CRF-22010-TB
- 50VDC ;66W; evaluation board for CRF-22010 version A (narrowband)
CRF-22010-101 Datasheet 및 사양
제조사 : Cree
포장 :
팡 : 2
온도 : 분 -30 °C | 맥스 120 °C
파일크기 : 157 KB
응용 프로그램 : 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
다운로드를 CRF-22010-101