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키워드 : Cree Datasheet, Cree Data Sheet, Cree 데이터 시트, Cree, Inc
경로 :OKDatasheet > 반도체업체순위 > Cree Datasheet
키워드 : Cree Datasheet, Cree Data Sheet, Cree 데이터 시트, Cree, Inc
구체적인 Cree, Inc 데이터 시트를 찾으려면, 찾기 okdatasheet 부품 번호 또는 구성 요소를 설명합니다. 당신과 함께 수여됩니다 Cree 부품과 일치하는 모든 데이터 시트의 목록을합니다. 클릭하면 전자 구성 요소를 나열 사양을 포함하여 자세한 내용을합니다.
Cree 공식 웹사이트
부품번호 | 응용 프로그램 |
---|---|
W6NRE0X-0000 | Diameter 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
W4TXE0X-0D00 | Diameter 76.2mm; lsemi-insulating (prototype); silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
W4NRE0X-0D00 | Diameter 76.2mm; standard micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
C505-XB290-E1000-A | 11.0mW; colorgreen; 3.8-4.0V; Xbright InGaN LED |
C470-XB900-A | 150mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
W6NXD0K-0000 | Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
W6NXD3J-0000 | Diameter 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CSD10120D | 1200V; 5A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
CSD04060E | 600V; 4A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
W4NXE4C-LD00 | Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CSD01060A | 600V; 1A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control |
C525-CB230-E1000 | 0.650W; colorgreen; 3.7V; low current InGaN LED |
C490-CB290-E1000 | 2.5mW; coloraqua blue; 3.3-3.7V; super bright InGaN LED |
W4TRD0R-0D00 | Diameter 50.8mm; semi-insulating; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
C527-MB290-E1000 | 7.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED |
W4NXE4C-SD00 | Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CRF-22010-001 | 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS |
C405-XB900-A | 250mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
C460-XB290-E1000-A | 15.0mW; colordeep blue; 3.7-4.0V; Xbright InGaN LED |
W4NRD8C-U000 | Diameter 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CSD20060D | 600V; 20A; zero recovery rectifier. For switch mode power supplies, power factor correction, motor control, snubber |
C460-UB290-E1000 | 5.5mW; colordeep blue; 3.5-3.9V; ultra bright InGaN LED |
CXXX-MB290-S0100 | 5V; 30mA; super bright LED. For outdoor LED video displays, automative dashboard lighting, white LEDs, backlighting |
C503-MB290-E1000 | 8.0mW; colorgreen; 3.7-4.0V; mega bright InGaN LED |
W4NXE8C-SD00 | Diameter 76.2mm; select micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
C470-XB290-E1000-A | 14.0mW; colorblue; 3.7-4.0V; Xbright InGaN LED |
C470-MB290-E1000 | 10.0mW; colorblue; 3.7-4.0V; mega bright InGaN LED |
W4NXE8C-LD00 | Diameter 76.2mm; low micropipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
Cree, Inc is a market and technology leader in LED chips, power LEDs, LEDs for backlighting, power switching and wireless communications devices.