BS616UV8021BI 유사

  • BS616LV2020DI
    • 2.7-3.6V 70/100ns very low power/voltage CMOS SRAM 128K x 16 switchable
  • BS616LV4011BC
    • 70/100ns 20-45mA 2.4-5.5V ultra low power/voltage CMOS SRAM 256K x 16bit
  • BS616LV4020AC
    • 70/100ns 20mA 2.7-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable
  • BS616LV2012DI
    • 70/100ns 2.7-3.6V ultra low power/voltage CMOS SRAM 128K x 16bit
  • BS616UV1620BI
    • 70/100ns 25mA 1.8-2.3V ultra low power/voltage CMOS SRAM 1M x 16 or 2M x 8bit switchable
  • BS616LV4023BI
    • 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 256K x 16 or 512K x 8bit switchable
  • BS616LV8013BC
    • 70/100ns 20mA 2.4-3.6V ultra low power/voltage CMOS SRAM 512K x 16bit
  • BS616UV1010AC
    • 150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit

BS616UV8021BI Datasheet 및 사양

제조사 : BSI 

포장 : BGA 

팡 : 48 

온도 : 분 -40 °C | 맥스 85 °C

파일크기 : 236 KB

응용 프로그램 : 70/100ns 15-20mA 1.8-2.3V ultra low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable 

다운로드를 BS616UV8021BI