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J6.0A 15KP60 SMCJ45 MDE-32D221K MDE-25S122K MDE-10D102K 5KP58 20KW52A SMDJ58A 5KP45 P6KE300A 3T310A 1.5KE440 MAX40-22.0C 1.5KE22 MDE-25S751K 1.5KE68 30KW36 MAX40-18.0CA P6KE30 SA130A MDE-25S821K 1.5KE110A P4KE100A SMDJ110 SMBJ70 MAX20-26.0C 15KW78A

MDE Semiconductor 데이터 시트 카탈로그-53

부품번호제조사응용 프로그램
P6KE7.5 MDE Semiconductor6.05V; 10mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE68A MDE Semiconductor58.10V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
SMAJ6.0A MDE Semiconductor6.00V; 10mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
15KP60 MDE Semiconductor60V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SMCJ45 MDE Semiconductor45.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MDE-32D221K MDE Semiconductor220V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc
MDE-25S122K MDE Semiconductor1200V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc
MDE-10D102K MDE Semiconductor1000V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc
5KP58 MDE Semiconductor58.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
20KW52A MDE Semiconductor52.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor
SMDJ58A MDE Semiconductor58.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
5KP45 MDE Semiconductor45.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
P6KE300A MDE Semiconductor256.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
3T310A MDE Semiconductor275V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor
1.5KE440 MDE Semiconductor356.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
MAX40-22.0C MDE Semiconductor22.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
1.5KE22 MDE Semiconductor17.80V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor
MDE-25S751K MDE Semiconductor750V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc
1.5KE68 MDE Semiconductor55.10V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
30KW36 MDE Semiconductor36.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
MAX40-18.0CA MDE Semiconductor18.00V; 5.0A ;40000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
P6KE30 MDE Semiconductor24.30V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SA130A MDE Semiconductor130.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
MDE-25S821K MDE Semiconductor820V; max peak current20000A; metal oxide varistor. Standard S series 25mm disc
1.5KE110A MDE Semiconductor94.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications
P4KE100A MDE Semiconductor85.50V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
SMDJ110 MDE Semiconductor110.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
SMBJ70 MDE Semiconductor70.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications
MAX20-26.0C MDE Semiconductor26.00V; 5.0A ;20000W peak pulse power; high current transient voltage suppressor (TVS) diode. For bipolar applications
15KW78A MDE Semiconductor78.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor

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