| 부품번호 | 제조사 | 응용 프로그램 |
|---|
| SMCJ17 | MDE Semiconductor | 17.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SA28A | MDE Semiconductor | 28.00V; 1mA ;500W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 1.5KE22 | MDE Semiconductor | 17.80V; 10mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| 15KP75A | MDE Semiconductor | 75V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| 1.5KE110A | MDE Semiconductor | 94.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| MDE-14D221K | MDE Semiconductor | 220V; max peak current6000A; metal oxide varistor. Standard D series 14mm disc |
| MDE-25D511K | MDE Semiconductor | 510V; max peak current20000A; metal oxide varistor. Standard D series 25mm disc |
| 1.5KE170 | MDE Semiconductor | 138.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor for TVS modules and hybrid circuit applications |
| SMDJ58 | MDE Semiconductor | 58.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-10D121K | MDE Semiconductor | 120V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| 20KW48 | MDE Semiconductor | 48.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| P4KE120A | MDE Semiconductor | 102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 3T064B | MDE Semiconductor | 58V; 1A; surface mount and axial lead two terminal thyristor (3T) surge suppressor |
| P4KE6.8A | MDE Semiconductor | 5.50V; 10mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MDE-10D680K | MDE Semiconductor | 68V; max peak current1000A; metal oxide varistor. Standard D series 10mm disc |
| MDE-25D821K | MDE Semiconductor | 820V; max peak current18000A; metal oxide varistor. Standard D series 25mm disc |
| P4KE43A | MDE Semiconductor | 36.80V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| 20KW216 | MDE Semiconductor | 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
| SMLJ8.0A | MDE Semiconductor | 8.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ18A | MDE Semiconductor | 18.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| MDE-10D621K | MDE Semiconductor | 620V; max peak current3500A; metal oxide varistor. Standard D series 10mm disc |
| MDE-32D911K | MDE Semiconductor | 910V; max peak current25000A; metal oxide varistor. High energy series 32mm single disc |
| 1N6388 | MDE Semiconductor | 36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
| SMAJ8.0A | MDE Semiconductor | 8.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| P6KE15A | MDE Semiconductor | 10.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
| MAX-370 | MDE Semiconductor | 333V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
| SMLJ7.5A | MDE Semiconductor | 7.50V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| 3KP28 | MDE Semiconductor | 28.00V; 5mA ;3000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
| SMDJ26A | MDE Semiconductor | 26.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
| SMLJ75A | MDE Semiconductor | 75.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
