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221B 1N4736A DF06G 3EZ4.3D4 FS2D 1N5525 1N5945D 1N5934D SMBJ5944A 1N5528D BB804 3EZ39D 3EZ3.9D1 P4KE30C 3EZ19D3 SMAJ16C P6KE170 HA15G FS2M SMAJ6.5A SF16G SMAJ14A 1N957D ES1J 1N5398 1W010 1N959B 1N5932

JGD 데이터 시트 카탈로그-42

부품번호제조사응용 프로그램
MUR130 JGD1.0A ultra fast rectifier. Max recurrent peak reverse voltage 300V.
P6KE12CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. Bidirectional.
ZMM5221B JGDSurface mount zener diode. Nominal zener voltage 2.4 V. Test current 20 mA. +-5% tolerance.
1N4736A JGD1W zener diode. Zener voltage 6.8V.
DF06G JGDSingle phase 1.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 600 V.
3EZ4.3D4 JGD3 W, silicon zener diode. Nominal voltage 4.3V, current 174mA, +-4% tolerance.
FS2D JGD1.5A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 200V.
1N5525 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 6.2 V. Test current 1.0 mAdc. +-20% tolerance.
1N5945D JGD1.5 W, silicon zener diode. Zener voltage 68 V. Test current 5.5 mA. +-1% tolerance.
1N5934D JGD1.5 W, silicon zener diode. Zener voltage 24V. Test current 15.6 mA. +-1% tolerance.
SMBJ5944A JGD1.5W silicon surface mount zener diode. Zener voltage 62 V. Test current 6.0 mA. +-10% tolerance.
1N5528D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-1% tolerance.
BB804 JGDSurface mount switching diode.
3EZ39D JGD3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-20% tolerance.
3EZ3.9D1 JGD3 W, silicon zener diode. Nominal voltage 3.9V, current 192mA, +-1% tolerance.
P4KE30C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 30 V. Bidirectional.
3EZ19D3 JGD3 W, silicon zener diode. Nominal voltage 19 V, current 40 mA, +-3% tolerance.
SMAJ16C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 16 V. Bidirectional.
P6KE170 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 170 V.
HA15G JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 400V.
FS2M JGD1.5A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 1000V.
SMAJ6.5A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 6.5 V.
SF16G JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 1.0 A.
SMAJ14A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 14 V.
1N957D JGD0.5W, silicon zener diode. Zener voltage 6.8V. Test current 18.5mA. +-1% tolerance.
ES1J JGD1.0 A super fast recovery silicon rectifier. Max recurrent peak reverse voltage 600 V.
1N5398 JGD1.5 A, silicon rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V.
1W010 JGDSingle phase 1.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 1000 V.
1N959B JGD0.5W, silicon zener diode. Zener voltage 8.2V. Test current 15.0mA. +-5% tolerance.
1N5932 JGD1.5 W, silicon zener diode. Zener voltage 20V. Test current 18.7 mA. +-20% tolerance.

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