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C HER204G KBL406 SMAJ33C ZMM55-B20 FR604 1N4750 SMAJ11 SMAJ48CA 3EZ200D3 1N4370 1N5401G P4KE400A 1N5531D SMBJ5927C 3EZ110D2 1N982 1N973D ZMM55-A47 P4KE8.2 SF12 1N4100D SMBJ150A 3EZ68D3 MMBZ5232B HER304G 1N992A 1N4109C

JGD 데이터 시트 카탈로그-29

부품번호제조사응용 프로그램
SF65 JGDSuper fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 6.0 A.
1N5936C JGD1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-2% tolerance.
P4KE180C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. Bidirectional.
HER204G JGD2.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V.
KBL406 JGDSingle-phase 4.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 600V.
SMAJ33C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 33 V. Bidirectional.
ZMM55-B20 JGDSurface mount zener diode, 500mW. Nominal zener voltage 18.8-21.2 V. Test current 5 mA. +-2% tolerance.
FR604 JGD6.0A, fast recovery rectifier. Max recurrent peak reverse voltage 400V.
1N4750 JGD1W zener diode. Nominal zener voltage 27V. 10% tolerance.
SMAJ11 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 11 V.
SMAJ48CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 48 V. Bidirectional.
3EZ200D3 JGD3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-3% tolerance.
1N4370 JGD500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-10% standard tolerance.
1N5401G JGD3.0 A, glass passivated rectifier. Max recurrent peak reverse voltage 100 V, max RMS voltage 70 V, max D. C blocking voltage 100 V.
P4KE400A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 400 V.
1N5531D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 11.0 V. Test current 1.0 mAdc. +-1% tolerance.
SMBJ5927C JGD1.5W silicon surface mount zener diode. Zener voltage 12 V. Test current 31.2 mA. +-2% tolerance.
3EZ110D2 JGD3 W, silicon zener diode. Nominal voltage 110 V, current 6.8 mA, +-2% tolerance.
1N982 JGD0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. +-20% tolerance.
1N973D JGD0.5W, silicon zener diode. Zener voltage 33V. Test current 3.8mA. +-1% tolerance.
ZMM55-A47 JGDSurface mount zener diode, 500mW. Nominal zener voltage 44-50 V. Test current 2.5 mA. +-1% tolerance.
P4KE8.2 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 8.2 V.
SF12 JGDSuper fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.0 A.
1N4100D JGD500mW low noise silicon zener diode. Nominal zener voltage 7.5V. 1% tolerance.
SMBJ150A JGDSurface mount transient voltage suppressor. Breakdown voltage 167 V (min), 185 V (max). Test current 1.0 mA.
3EZ68D3 JGD3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-3% tolerance.
MMBZ5232B JGDSurface mount zener diode. Nominal zener voltage 5.6V, test current 20.0mA.
HER304G JGD3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V.
1N992A JGD0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-10% tolerance.
1N4109C JGD500mW low noise silicon zener diode. Nominal zener voltage 15V. 2% tolerance.

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