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FR154G P4KE180CA BZX84C11 SMAJ110A MUR410 1N968C SMAJ8.0CA SFR1A4 ZMM55-C3V9 3EZ12D10 1N5538D S1B 1N5931C SMBJ5920A 1N965D FS1A 1N5529 3EZ140D5 SMBJ120A 1N4127D 1N968D 1N5926A P4KE91A P4KE39C HER102L 1N5936A 3EZ14D

JGD 데이터 시트 카탈로그-26

부품번호제조사응용 프로그램
1N5930C JGD1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-2% tolerance.
1N4127C JGD500mW low noise silicon zener diode. Nominal zener voltage 56V. 2% tolerance.
SS18 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current 1.0 A.
FR154G JGD1.5A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400V.
P4KE180CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. Bidirectional.
BZX84C11 JGD350mW zener diode, 11V
SMAJ110A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V.
MUR410 JGD4.0A ultra fast rectifier. Max recurrent peak reverse voltage 100V.
1N968C JGD0.5W, silicon zener diode. Zener voltage 20V. Test current 6.2mA. +-2% tolerance.
SMAJ8.0CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. Bidirectional.
SFR1A4 JGDSoft fast recovery rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 1.0 A.
ZMM55-C3V9 JGDSurface mount zener diode, 500mW. Nominal zener voltage 3.7-4.1 V. Test current 5 mA. +-5% tolerance.
3EZ12D10 JGD3 W, silicon zener diode. Nominal voltage 12 V, current 63 mA, +-10% tolerance.
1N5538D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-1% tolerance.
S1B JGDSurface mount rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A.
1N5931C JGD1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-2% tolerance.
SMBJ5920A JGD1.5W silicon surface mount zener diode. Zener voltage 6.2 V. Test current 60.5 mA. +-10% tolerance.
1N965D JGD0.5W, silicon zener diode. Zener voltage 15V. Test current 8.5mA. +-1% tolerance.
FS1A JGD1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 50V.
1N5529 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-20% tolerance.
3EZ140D5 JGD3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-5% tolerance.
SMBJ120A JGDSurface mount transient voltage suppressor. Breakdown voltage 133 V (min), 147 V (max). Test current 1.0 mA.
1N4127D JGD500mW low noise silicon zener diode. Nominal zener voltage 56V. 1% tolerance.
1N968D JGD0.5W, silicon zener diode. Zener voltage 20V. Test current 6.2mA. +-1% tolerance.
1N5926A JGD1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-10% tolerance.
P4KE91A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 91 V.
P4KE39C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 39 V. Bidirectional.
HER102L JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V.
1N5936A JGD1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-10% tolerance.
3EZ14D JGD3 W, silicon zener diode. Nominal voltage 14 V, current 53 mA, +-20% tolerance.

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