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36 1N4764C FR301G SMBJ17A 1N4134C 1N4745D SR308 P6KE150CA SMBJ12CA P4KE180 KBU604G SMBJ5936D SR750 P4KE13 P6KE36C 1N4615 SMBJ5942D 1N4105D KBU600G 3EZ68D SMBJ160 SF11G 1N5817 BAW56 1N4623 3EZ200D10 3EZ43D5 3EZ4.7D2

JGD 데이터 시트 카탈로그-23

부품번호제조사응용 프로그램
P6KE22CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 22 V. Bidirectional.
F1A7 JGD1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 1000 V.
SMBJ5936 JGD1.5W silicon surface mount zener diode. Zener voltage 30 V. Test current 12.5 mA. +-20% tolerance.
1N4764C JGD1W zener diode. Nominal zener voltage 100V. 2% tolerance.
FR301G JGD3.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50V.
SMBJ17A JGDSurface mount transient voltage suppressor. Breakdown voltage 18.9 V (min), 20.9 V (max). Test current 1.0 mA.
1N4134C JGD500mW low noise silicon zener diode. Nominal zener voltage 91V. 2% tolerance.
1N4745D JGD1W zener diode. Nominal zener voltage 16V. 1% tolerance.
SR308 JGDSchottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward current 3.0 A.
P6KE150CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V. Bidirectional.
SMBJ12CA JGDSurface mount transient voltage suppressor. Breakdown voltage 13.3 V (min), 14.7 V (max). Test current 1.0 mA. Bidirectional.
P4KE180 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V.
KBU604G JGDSingle phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V.
SMBJ5936D JGD1.5W silicon surface mount zener diode. Zener voltage 30 V. Test current 12.5 mA. +-1% tolerance.
SR750 JGDSchottky barrier rectifier (single chip). Max repetitive peak reverse voltage 50 V. Max average forward current 7.5 A.
P4KE13 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 13 V.
P6KE36C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 36 V. Bidirectional.
1N4615 JGD500mW low noise silicon zener diode. Nominal zener voltage 2.0V.
SMBJ5942D JGD1.5W silicon surface mount zener diode. Zener voltage 51 V. Test current 7.3 mA. +-1% tolerance.
1N4105D JGD500mW low noise silicon zener diode. Nominal zener voltage 11V. 1% tolerance.
KBU600G JGDSingle phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V.
3EZ68D JGD3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-20% tolerance.
SMBJ160 JGDSurface mount transient voltage suppressor. Breakdown voltage 178 V (min), 218 V (max). Test current 1.0 mA.
SF11G JGDGlass passivated super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A.
1N5817 JGD1.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 20 V, max RMS voltage 14 V, max DC blocking voltage 20 V.
BAW56 JGDSurface mount switching diode. Max forward voltage 1.00V at 50mA.
1N4623 JGD500mW low noise silicon zener diode. Nominal zener voltage 4.3V.
3EZ200D10 JGD3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance.
3EZ43D5 JGD3 W, silicon zener diode. Nominal voltage 43 V, current 17 mA, +-5% tolerance.
3EZ4.7D2 JGD3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-2% tolerance.

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