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5C P6KE13C SMBJ5925C 3EZ5.1D4 3EZ33D5 1N4739A 3EZ33D2 1N5528A HER104L 3EZ6.2D3 SMAJ8.0CA SMBJ5928D SFR206 1N5544C FR607G SMBJ5933A HER303G SMAJ60A P6KE12C 1N5522A 3EZ39D1 BB814 1N5941B P4KE51C 3EZ9.1D10 P6KE150 1N991C HER203G

JGD 데이터 시트 카탈로그-20

부품번호제조사응용 프로그램
KBU602G JGDSingle phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 200V.
1N5925C JGD1.5 W, silicon zener diode. Zener voltage 10V. Test current 37.5 mA. +-2% tolerance.
1N985C JGD0.5W, silicon zener diode. Zener voltage 100V. Test current 1.3mA. +-2% tolerance.
P6KE13C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 13 V. Bidirectional.
SMBJ5925C JGD1.5W silicon surface mount zener diode. Zener voltage 10 V. Test current 37.5 mA. +-2% tolerance.
3EZ5.1D4 JGD3 W, silicon zener diode. Nominal voltage 5.1 V, current 147 mA, +-4% tolerance.
3EZ33D5 JGD3 W, silicon zener diode. Nominal voltage 33 V, current 23 mA, +-5% tolerance.
1N4739A JGD1W zener diode. Zener voltage 9.1V.
3EZ33D2 JGD3 W, silicon zener diode. Nominal voltage 33 V, current 23 mA, +-2% tolerance.
1N5528A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 8.2 V. Test current 1.0 mAdc. +-10% tolerance.
HER104L JGD1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 300V.
3EZ6.2D3 JGD3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-3% tolerance.
SMAJ8.0CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. Bidirectional.
SMBJ5928D JGD1.5W silicon surface mount zener diode. Zener voltage 13 V. Test current 28.8 mA. +-1% tolerance.
SFR206 JGDSoft fast recovery rectifier. Max recurrent peak reverse voltage 800 V. Max average forward current 2.0 A.
1N5544C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 28.0 V. Test current 1.0 mAdc. +-2% tolerance.
FR607G JGD6.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V.
SMBJ5933A JGD1.5W silicon surface mount zener diode. Zener voltage 22 V. Test current 17.0 mA. +-10% tolerance.
HER303G JGD3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V.
SMAJ60A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 60 V.
P6KE12C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 12 V. Bidirectional.
1N5522A JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 4.7 V. Test current 10 mAdc. +-10% tolerance.
3EZ39D1 JGD3 W, silicon zener diode. Nominal voltage 39 V, current 19 mA, +-1% tolerance.
BB814 JGDSurface mount switching diode.
1N5941B JGD1.5 W, silicon zener diode. Zener voltage 47 V. Test current 8.0 mA. +-5% tolerance.
P4KE51C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional.
3EZ9.1D10 JGD3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-10% tolerance.
P6KE150 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V.
1N991C JGD0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-2% tolerance.
HER203G JGD2.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 200V.

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