경로 :okDatasheet > 반도체업체순위 > JGD Datasheet > JGD-12

P6KE51C FR105L 1N4007L 1N748A P6KE250CA 1A2 3EZ8.2D3 1N5545 3EZ11D5 1N5920D SMAJ51CA ZMM55-A22 1N4001L ZMM55-D8V2 SS18 SMAJ75CA HER305G MMBD1204 SMAJ28 P6KE18C ZMM5231D 1N983 6A4 SMAJ75 1N4128C SMBJ51A SMAJ75A

JGD 데이터 시트 카탈로그-12

부품번호제조사응용 프로그램
1N5928 JGD1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-20% tolerance.
3EZ17D2 JGD3 W, silicon zener diode. Nominal voltage 17 V, current 44 mA, +-2% tolerance.
SF22 JGDSuper fast rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 2.0 A.
P6KE51C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 51 V. Bidirectional.
FR105L JGD1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 600V.
1N4007L JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 1000V.
1N748A JGD500mW, silicon zener diode. Zener voltage 3.9 V. Test current 20 mA. +-5% tolerance.
P6KE250CA JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 250 V. Bidirectional.
1A2 JGD1.0 A silicon rectifier. Max recurrent peak reverse voltage 100 V.
3EZ8.2D3 JGD3 W, silicon zener diode. Nominal voltage 8.2 V, current 91 mA, +-3% tolerance.
1N5545 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 30.0 V. Test current 1.0 mAdc. +-20% tolerance.
3EZ11D5 JGD3 W, silicon zener diode. Nominal voltage 11 V, current 68 mA, +-5% tolerance.
1N5920D JGD1.5 W, silicon zener diode. Zener voltage 6.2V. Test current 60.5 mA. +-1% tolerance.
SMAJ51CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 51 V. Bidirectional.
ZMM55-A22 JGDSurface mount zener diode, 500mW. Nominal zener voltage 20.8-23.3 V. Test current 5 mA. +-1% tolerance.
1N4001L JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 50V.
ZMM55-D8V2 JGDSurface mount zener diode, 500mW. Nominal zener voltage 7.7-8.7 V. Test current 5 mA. +-20% tolerance.
SS18 JGDSurface mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current 1.0 A.
SMAJ75CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 75 V. Bidirectional.
HER305G JGD3.0 A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 400V.
MMBD1204 JGDSurface mount switching diode. Max forward voltage 1.00V at 200mA.
SMAJ28 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 28 V.
P6KE18C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 18 V. Bidirectional.
ZMM5231D JGDSurface mount zener diode. Nominal zener voltage 5.1 V. Test current 20 mA. +-20% tolerance.
1N983 JGD0.5W, silicon zener diode. Zener voltage 82V. Test current 1.5mA. +-20% tolerance.
6A4 JGD6.0 A silicon rectifier. Max recurrent peak reverse voltage 400 V.
SMAJ75 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 75 V.
1N4128C JGD500mW low noise silicon zener diode. Nominal zener voltage 60V. 2% tolerance.
SMBJ51A JGDSurface mount transient voltage suppressor. Breakdown voltage 56.7 V (min), 62.7 V (max). Test current 1.0 mA.
SMAJ75A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 75 V.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 >>