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-0801 H5783-03 PLP10-078C F2224-19P G7871-02 C9052-04 C4877 G1735 L8121-01 G9129-21 L2402 L7727 R1450 G1117 R2868 PLP10-155 R5611 F2224-24S G8370-02 R8487 G8372-01 L3458-03 G7096-01 R6358 G8343-32 P1241-06 B749 R212
부품번호 | 제조사 | 응용 프로그램 |
---|---|---|
R4998 | Hamamatsu | Spectral responce300-650nm; between anode and cathode2500Vdc; 0.1mA; photomultiplier tube |
L8347-12 | Hamamatsu | Connector typeFC ;2V; 0.1mW; laser diode pigtail type, 1.3um, 1.25, 2.5Gpbs. For optical fiber communications, fiber channel, gigabit ethernet, HDTV, SDH |
C5964-0801 | Hamamatsu | Pixel size50(H) x 2500(V); number of pixels256; supply voltage -0.5 to +7V; NMOS multichannel detector head which incorporates a thermoelectrically-colled NMOS linear image sensor |
H5783-03 | Hamamatsu | Input voltage 11.5-15.5V; photosensor module in metal package PMT |
PLP10-078C | Hamamatsu | High-repetition up to 100MHz picosecond light pulser; wavelength range from 375 to 1,550nm |
F2224-19P | Hamamatsu | Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics |
G7871-02 | Hamamatsu | Supply voltage0.3-5.5V; InGaAs PIN photodiode with preamp 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
C9052-04 | Hamamatsu | Supply voltage +16V; Si photodiode evalution circuit easy to use for Si photodiode operation |
C4877 | Hamamatsu | Input voltage100V +-10V(50Hz/60Hz); outputV 28V; output current 4.3A; high performance electronic cooler |
G1735 | Hamamatsu | Active area size1.3x1.3mm; reverse voltage5V; GaAsP photodiode - diffusion type (red sensitivity extended type). For analytical instruments, color identification |
L8121-01 | Hamamatsu | 150kV; 75W; microfocus X-ray source |
G9129-21 | Hamamatsu | Connector type SC; supply voltage 20V; InGaAs PIN photodiode with preamp mini-DIL type, 1.3/1.55um, 156, 622 Mbps/1.25, 2.5Gbps |
L2402 | Hamamatsu | 65mA; 5V; 1.0A; infrared LED. For optical switches and automatic control systems |
L7727 | Hamamatsu | Forward current50mA; 2.3V; 250mW; red LED/photo IC for optical link emitter/receiver for 156Mbps POF communications |
R1450 | Hamamatsu | Stectral responce 300 to 650nm; 1800Vdc; anode current 0.1mA; hotomultiplier tube |
G1117 | Hamamatsu | Active area size5.6x5.6mm; reverse voltage5V; GaAsP photodiode - diffusion type. For visible light detection. For analytical instruments and color identification |
R2868 | Hamamatsu | Spectral responce185-260nm; 400Vdc; 30mA; flame sensor quick detection of flame from distance, suitable for flame detectors and alarms |
PLP10-155 | Hamamatsu | High-repetition up to 100MHz picosecond light pulser; wavelength range from 375 to 1,550nm |
R5611 | Hamamatsu | Spectral responce300-650nm; between anode and cathode1250Vdc; 0.1mA; photomultiplier tube |
F2224-24S | Hamamatsu | Circular MCP and assembly series. For analytical instruments, electron tibe, cosmic measurement, high energy physics |
G8370-02 | Hamamatsu | Reverse voltage5V; spectral response range0.9-1.7um; InGaAs PIN photodiode with preamp with large active area (1-5mm). For laser monitor, optical power meter and laser diode life test |
R8487 | Hamamatsu | Spectral responce115-195nm; between anode and cathode1250Vdc; 0.1mA; photomultiplier tube |
G8372-01 | Hamamatsu | Reverse voltage2V; spectral response range0.9-2.1um; InGaAs PIN photodiode long wavelength type (up to 2.1um). For NIR (near infrared) photometry, gas analyzer, water content analyzer |
L3458-03 | Hamamatsu | 65mA; 5V; 1.0A; infrared LED. For optical switches and automatic control systems |
G7096-01 | Hamamatsu | MAx Bias volatge +-10V; pulesd light 50mW; ultrafast MSM photodetectors. For optical high-speed waveform measurements, optical communications |
R6358 | Hamamatsu | Spectral responce185-830nm; new compact type PMT |
G8343-32 | Hamamatsu | Supply voltage0.3-3.8V; InGaAs PIN photodiode with preamp pigtail type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
P1241-06 | Hamamatsu | 50Vdc; 30mW; CdS photoconductive cell standard type designed for general purpose, wide application |
B749 | Hamamatsu | Output polarity positive; photo sensitivity1.2mV/kW; photon drag detector |
R212 | Hamamatsu | Spectral responce 185 to 650nm; 1250Vdc; anode current 0.1mA; photomultiplier tube |